2SC5066FT

2007-11-01

1

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type

2SC5066FT

VHF~UHF Band Low Noise Amplifier Applications

• Low noise figure, high gain.

Characteristics

Symbol

Rating

Unit

Collector-base voltage

20

V

Collector-emitter voltage

12

V

Emitter-base voltage

3

V

Base current

15

mA

Collector current

30

mA

Collector power dissipation

100

mW

Junction temperature

125

°C

Storage temperature range

−55~125

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate,

etc).

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Transition frequency

5

7

⎯

GHz

⎯

17

⎯

Insertion gain

8.5

12

⎯

dB

NF (1)

⎯

1

⎯

Noise figure

NF (2)

⎯

1.1

2.0

dB

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

⎯

⎯

1

μA

Emitter cut-off current

⎯

⎯

1

μA

DC current gain

(Note 1)

80

⎯

240

Output capacitance

⎯

0.7

⎯

pF

Reverse transfer capacitance

(Note 2)

⎯

0.45

0.9

pF

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-1B1A

Weight: 0.0022 g (typ.)