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2SC5208 Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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2SC5208 Datasheet(HTML) 3 Page - Toshiba Semiconductor |
3 / 5 page 2SC5208 2006-11-13 3 Collector-emitter voltage VCE (V) IC – VCE Collector current IC (mA) hFE – IC VCE (sat) – IC Collector current IC (mA) VBE (sat) – IC 300 1 1 100 30 10 3 10 30 100 300 1000 3 Common emitter VCE = 5 V Ta = 100°C 25 −40 5 50 0.1 10 Ta = −40°C 25 0.3 0.5 1 3 Common emitter IC/IB = 10 100 5 1 10 100 1000 3 30 300 Base-emitter voltage VBE (V) IC – VBE 1000 0 0 800 600 400 200 0.4 0.6 0.8 1.0 1.2 0.2 Common emitter VCE = 5 V Ta = 100°C 25 −40 Collector current IC (A) Switching Characteristics 100 0.1 0 30 10 1 0.5 0.1 0.2 0.5 tf tstg IC/IB = 10 IB1 = −IB2 Pulse width = 20 μs Duty cycle ≤ 1% Ta = 25°C 3 5 50 0.3 0.4 0.3 tr Collector current IC (mA) 10 0.03 1 3 1 0.1 0.05 10 100 1000 Ta = 100°C 25 −40 Common emitter IC/IB = 10 0.3 0.5 5 3 30 300 1000 800 600 400 200 4 6 8 10 12 2 0 20 30 10 IB = 2 mA 40 5 60 0 80 Common emitter Ta = 25°C 0 |
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