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2SC5713 Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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2SC5713 Datasheet(HTML) 3 Page - Toshiba Semiconductor |
3 / 5 page 2SC5713 2006-11-10 3 Base-emitter voltage VBE (V) Collector-emitter voltage VCE (V) IC – VCE Collector current IC (A) hFE – IC Collector current IC (A) VCE (sat) – IC Collector current IC (A) VBE (sat) – IC IC – VBE 10000 0.001 1000 100 10 0.01 0.1 1 10 25°C Ta = 100°C −55°C Common emitter VCE = 2 V Single nonrepetitive pulse 0.001 1 0.1 0.01 0.001 0.01 0.1 1 10 Common emitter IC/IB = 50 Single nonrepetitive pulse 25°C −55°C Ta = 100°C 0.001 0.01 0.1 1 10 10 0.1 1 Common emitter IC/IB = 50 Single nonrepetitive pulse 25°C 100°C Ta = −55°C Common emitter VCE = 2 V Single nonrepetitive pulse 0 0.4 0.8 1.2 1.6 0 5 4 3 2 1 Ta = 100°C −55°C 25°C 0 0 Common emitter Ta = 25°C Single nonrepetitive pulse 6 5 4 3 2 1 0.4 25 20 15 10 8 6 4 IB = 2 mA 0.8 1.2 2 2.4 1.6 |
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