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2SC5713 Datasheet(PDF) 3 Page - Toshiba Semiconductor

Part # 2SC5713
Description  Silicon NPN Epitaxial Type High-Speed Switching Applications
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SC5713 Datasheet(HTML) 3 Page - Toshiba Semiconductor

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2SC5713
2006-11-10
3
Base-emitter voltage VBE (V)
Collector-emitter voltage VCE (V)
IC – VCE
Collector current IC (A)
hFE – IC
Collector current IC (A)
VCE (sat) – IC
Collector current IC (A)
VBE (sat) – IC
IC – VBE
10000
0.001
1000
100
10
0.01
0.1
1
10
25°C
Ta
= 100°C
−55°C
Common emitter
VCE = 2 V
Single nonrepetitive
pulse
0.001
1
0.1
0.01
0.001
0.01
0.1
1
10
Common emitter
IC/IB = 50
Single nonrepetitive pulse
25°C
−55°C
Ta
= 100°C
0.001
0.01
0.1
1
10
10
0.1
1
Common emitter
IC/IB = 50
Single nonrepetitive
pulse
25°C
100°C
Ta
= −55°C
Common emitter
VCE = 2 V
Single nonrepetitive pulse
0
0.4
0.8
1.2
1.6
0
5
4
3
2
1
Ta
= 100°C
−55°C
25°C
0
0
Common emitter
Ta
= 25°C
Single nonrepetitive pulse
6
5
4
3
2
1
0.4
25
20
15
10
8
6
4
IB = 2 mA
0.8
1.2
2
2.4
1.6


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