2SC2240_07 datasheet(2/5 Pages) TOSHIBA

Part #	2SC2240

Description	Silicon NPN Epitaxial Type (PCT process)

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Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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2 / 5 page

2SC2240

2007-11-01

2

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

ICBO

VCB = 120 V, IE = 0

⎯

0.1

μA

Emitter cut-off current

IEBO

VEB = 5 V, IC = 0

⎯

0.1

μA

Collector-emitter breakdown voltage

V (BR) CEO

IC = 1 mA, IB = 0

120

⎯

V

DC current gain

hFE

(Note)

VCE = 6 V, IC = 2 mA

200

⎯

700

Collector-emitter saturation voltage

VCE (sat)

IC = 10 mA, IB = 1 mA

⎯

0.3

V

Base-emitter voltage

VBE

VCE = 6 V, IC = 2 mA

⎯

0.65

⎯

V

Transition frequency

fT

VCE = 6 V, IC = 1 mA

⎯

100

⎯

MHz

Collector output capacitance

Cob

VCB = 10 V, IE = 0, f = 1 MHz

⎯

3.0

⎯

pF

VCE = 6 V, IC = 0.1 mA, f = 10 Hz,

RG = 10 kΩ

⎯

6

VCE = 6 V, IC = 0.1 mA, f = 1 kHz,

RG = 10 kΩ

⎯

2

Noise figure

NF

VCE = 6 V, IC = 0.1 mA, f = 1 kHz,

RG = 100 Ω

⎯

4

⎯

dB

Note: hFE classification GR: 200~400, BL: 350~700

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