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1SS393 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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1SS393 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 3 page 1SS393 2007-11-01 1 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS393 High Speed Switching Application Low forward voltage : VF (3) = 0.54V (typ.) Low reverse current : IR = 5μA (max) Small package : SC-70 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward current IFM 300 * mA Average forward current IO 100 * mA Surge current (10ms) IFSM 1 * A Power dissipation P 100 * mW Junction temperature Tj 125 °C Storage temperature range Tstg −55 ∼125 °C Operating temperature range Topr −40 ∼100 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). * : Unit rating. Total rating = unit rating × 1.5 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Circuit Test Condition Min Typ. Max Unit VF (1) ― IF = 1mA ― 0.28 ― VF (2) ― IF = 10mA ― 0.36 ― Forward voltage VF (3) ― IF = 100mA ― 0.54 0.60 V Reverse current IR ― VR = 40V ― ― 5 μA Total capacitance CT ― VR = 0, f = 1MHz ― 18 25 pF JEDEC ― EIAJ SC-70 TOSHIBA 1-2P1B Weight: 0.006g Unit: mm |
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