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2SC2712 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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2SC2712 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
2 / 5 page 2SC2712 2007-11-01 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 60 V, IE = 0 ⎯ ⎯ 0.1 μA Emitter cut-off current IEBO VEB = 5 V, IC = 0 ⎯ ⎯ 0.1 μA DC current gain hFE (Note) VCE = 6 V, IC = 2 mA 70 ⎯ 700 Collector-emitter saturation voltage VCE (sat) IC = 100 mA, IB = 10 mA ⎯ 0.1 0.25 V Transition frequency fT VCE = 10 V, IC = 1 mA 80 ⎯ ⎯ MHz Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz ⎯ 2.0 3.5 pF Noise figure NF VCE = 6 V, IC = 0.1 mA, f = 1 kHz, Rg = 10 kΩ ⎯ 1.0 10 dB Note: hFE classification O (O): 70~140, Y (Y): 120~240, GR (G): 200~400, BL (L): 350~700 ( ) marking symbol |
Similar Part No. - 2SC2712_07 |
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Similar Description - 2SC2712_07 |
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