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2SC6033 Datasheet(PDF) 4 Page - Toshiba Semiconductor

Part # 2SC6033
Description  Silicon NPN Epitaxial Type
Download  5 Pages
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SC6033 Datasheet(HTML) 4 Page - Toshiba Semiconductor

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2SC6033
2006-11-13
4
rth – tw
Collector-emitter voltage VCE (V)
Safe Operating Area
Pulse width tw (s)
1000
1
0.001
1000
0.01
0.1
1
10
100
10
100
Curves should be applied in thermal limited area.
Single nonrepetitive pulse Ta
= 25°C
Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm
2)
10
1 ms*
10 ms*
VCEO max
100 μs*
100 ms*
IC max (Pulse)*
0.1
10
100
1
0.1
1
0.01
10 μs*
DC operation
Ta = 25°C
*: Single nonrepetitive pulse
Ta
= 25°C
Note that the curves for 100 ms,
10 s and DC operation will be
different when the devices aren’t
mounted on an FR4 board (glass
epoxy, 1.6 mm thick, Cu area:
645 mm
2).
Single-device operation
These characteristic curves must
be derated linearly with increase
in temperature.
IC max (Continuous)*
10 s*


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