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2SJ508 Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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2SJ508 Datasheet(HTML) 3 Page - Toshiba Semiconductor |
3 / 6 page 2SJ508 2007-01-16 3 ID – VDS ID – VDS ID – VGS VDS – VGS |Yfs| – ID RDS (ON) – ID −4 −6 −8 −10 0 −0.8 −1.2 −1.6 −2.0 −0.4 0 −2 −8 −12 −16 −20 0 −1.0 −1.5 −2.0 −2.5 −0.5 0 −4 −10 0.1 1 −0.01 −0.1 −1 0.1 0 −0.4 −0.6 −0.8 −1.0 −2 −3 −4 −5 0 −1 −2 −4 0 −0.8 −1.2 −1.6 −2.0 −0.4 0 −1 10 10 −5 1 −0.2 −3 −10 −1 −0. 1 Ta = −55°C 100 25 Common source VDS = −10 V Pulse test −3.0 Common source Ta = 25°C Pulse test ID = −1 A −0.2 −0.5 Common source VDS = −10 V Pulse test Ta = −55°C 25 100 Common source Ta = 25°C Pulse test VGS = −4 V −10 −5 −3.2 −10 −8 −6 Common source Ta = 25°C Pulse test VGS = −2.1V −2.5 −2.8 −3 Common source Ta = 25°C Pulse test −10 −4.5 −5 −8 −4 −3.6 −3 VGS = −2.1 V −2.5 Drain-source voltage VDS (V) Drain-source voltage VDS (V) Gate-source voltage VGS (V) Gate-source voltage VGS (V) Drain current ID (A) Drain current ID (A) |
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