2SK371

2007-11-01

1

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type

2SK371

For Low Noise Audio Amplifier Applications

• Suitable for use as first stage for equalizer and MC head amplifiers.

• Super low noise: NF = 1.0dB (typ.)

• Small package

Characteristics

Symbol

Rating

Unit

Gate-drain voltage

−40

V

Gate current

10

mA

Drain power dissipation

200

mW

Junction temperature

125

°C

Storage temperature range

−55~125

°C

Note:

Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and

individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate cut-off current

⎯

⎯

−1.0

nA

Gate-drain breakdown voltage

−40

⎯

⎯

V

Drain current

(Note 1)

5.0

⎯

30

mA

Gate-source cut-off voltage

−0.3

⎯

−1.2

V

Forward transfer admittance

25

40

⎯

mS

Input capacitance

⎯

75

⎯

pF

Reverse transfer capacitance

⎯

15

⎯

pF

NF (1)

f

= 100 Hz

⎯

5

10

Noise figure

(Note 2)

NF (2)

f

= 1 kHz

⎯

1

2

dB

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-4E1C

Weight: 0.13 g (typ.)