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CM600HA-28H Datasheet(PDF) 2 Page - Mitsubishi Electric Semiconductor |
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CM600HA-28H Datasheet(HTML) 2 Page - Mitsubishi Electric Semiconductor |
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2 / 4 page  Sep.1998 Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM600HU-12H Units Junction Temperature Tj -40 to 150 °C Storage Temperature Tstg -40 to 125 °C Collector-Emitter Voltage (G-E SHORT) VCES 1400 Volts Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts Collector Current (Tc = 25°C) IC 600 Amperes Peak Collector Current (Tj ≤ 150°C) ICM 1200* Amperes Emitter Current** (Tc = 25°C) IE 600 Amperes Peak Emitter Current** IEM 1200* Amperes Maximum Collector Dissipation (Tc = 25°C) Pc 4100 Watts Mounting Torque, M8 Main Terminal – 8.83~10.8 N · m Mounting Torque, M6 Mounting – 1.96~2.94 N · m Mounting Torque, M4 Terminal – 0.98~1.47 N · m Weight – 560 Grams Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Viso 2500 Vrms * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current ICES VCE = VCES, VGE = 0V – – 2.0 mA Gate Leakage Current IGES VGE = VGES, VCE = 0V – – 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 60mA, VCE = 10V 5.0 6.0 8.0 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 600A, VGE = 15V – 3.1 4.2** Volts IC = 600A, VGE = 15V, Tj = 150°C – 2.95 – Volts Total Gate Charge QG VCC = 800V, IC = 600A, VGE = 15V – 3060 – nC Emitter-Collector Voltage VEC IE = 600A, VGE = 0V – – 3.8 Volts ** Pulse width and repetition rate should be such that device junction temperature rise is negligible. Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Input Capacitance Cies – – 120 nF Output Capacitance Coes VGE = 0V, VCE = 10V – – 42 nF Reverse Transfer Capacitance Cres – – 24 nF Resistive Turn-on Delay Time td(on) – – 350 ns Load Rise Time tr VCC = 800V, IC = 600A, – – 700 ns Switching Turn-off Delay Time td(off) VGE1 = VGE2 = 15V, RG = 2.1Ω – – 500 ns Times Fall Time tf – – 500 ns Diode Reverse Recovery Time trr IE = 600A, diE/dt = –1200A/µs – – 300 ns Diode Reverse Recovery Charge Qrr IE = 600A, diE/dt = –1200A/µs – 6.0 – µC Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case Rth(j-c) Per IGBT – – 0.03 °C/W Thermal Resistance, Junction to Case Rth(j-c) Per FWDi – – 0.06 °C/W Contact Thermal Resistance Rth(c-f) Per Module, Thermal Grease Applied – – 0.035 °C/W MITSUBISHI IGBT MODULES CM600HA-28H HIGH POWER SWITCHING USE INSULATED TYPE |
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