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2SK1486 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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2SK1486 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 6 page 2SK1486 2006-11-02 1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII .5 ) 2SK1486 Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 0.08 Ω (typ.) High forward transfer admittance : |Yfs| = 14 S (typ.) Low leakage current : IDSS = 300 μA (max) (VDS = 300 V) Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage VDSS 300 V Drain−gate voltage (RGS = 20 kΩ) VDGR 300 V Gate−source voltage VGSS ±30 V DC (Note 1) ID 32 Drain current Pulse (Note 1) IDP 128 A Drain power dissipation (Tc = 25°C) PD 200 W Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case Rth (ch−c) 0.625 °C / W Thermal resistance, channel to ambient Rth (ch−a) 35.7 °C / W Note 1: Ensure that the channel temperature does not exceed 150°C. This transistor is an electrostatic-sensitive device. Please handle with caution. Unit: mm JEDEC ― JEITA ― TOSHIBA 2-21F1B Weight: 9.75 g (typ.) |
Similar Part No. - 2SK1486_06 |
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Similar Description - 2SK1486_06 |
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