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2SJ676 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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2SJ676 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
2 / 3 page 2SJ676 2006-11-17 2 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V — — ±10 μA Drain cutoff current IDSS VDS = −200 V, VGS = 0 V — — −100 μA Drain−source breakdown voltage V (BR) DSS ID = −10 mA, VGS = 0 V −200 — — V Gate threshold voltage Vth VDS = −10 V, ID = −1 mA −1.5 — −3.5 V Drain−source ON-resistance RDS (ON) VGS = −10 V, ID = −1.5 A — 1.6 2.0 Ω Forward transfer admittance |Yfs| VDS = −10 V, ID = −1.5 A 1.0 2.0 — S Input capacitance Ciss — 410 — Reverse transfer capacitance Crss — 40 — Output capacitance Coss VDS = −10 V, VGS = 0 V, f = 1 MHz — 145 — pF Rise time tr — 20 — Turn−on time ton — 45 — Fall time tf — 15 — Switching time Turn−off time toff — 85 — ns Total gate charge (gate−source plus gate−drain) Qg — 10 — Gate−source charge Qgs — 6 — Gate−drain (“Miller”) charge Qgd VDD ≈ −160 V, VGS = −10 V, ID = −2.5 A — 4 — nC Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR — — — −2.5 A Pulse drain reverse current (Note 1) IDRP — — — −10 A Forward voltage (diode) VDSF IDR = −2.5 A, VGS = 0 V — — 2.0 V Reverse recovery time trr — 135 — ns Reverse recovery charge Qrr IDR = −2.5 A, VGS = 0 V dlDR / dt = 100 A / μs — 0.81 — μC Marking Duty <= 1%, tw = 10 μs −10 V 0 V VGS RL = 66.7 Ω VDD ∼− −100 V ID = −1.5 A Output J676 Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Part No. (or abbreviation code) |
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