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2SK3389 Datasheet(PDF) 6 Page - Toshiba Semiconductor |
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2SK3389 Datasheet(HTML) 6 Page - Toshiba Semiconductor |
6 / 7 page 2SK3389 2006-11-16 6 Channel temperature (initial) Tch (°C) EAS – Tch rth – tw Pulse width tw (s) Drain-source voltage VDS (V) Safe operating area 0.01 10 μ 0.1 1 10 100 μ 1 m 10 m 100 m 1 10 T PDM t Duty = t/T Rth (ch-c) = 1.0°C/W Duty = 0.5 0.2 0.1 Single 0.05 0.02 0.01 1000 800 600 400 200 0 25 50 75 100 125 150 0.1 0.1 1 10 100 1000 1 10 100 *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature ID max (pulsed) * 100 μs * 1 ms * ID max (continuous) DC operation Tc = 25°C VDSS max Waveform IAR BVDSS VDD VDS RG = 25 Ω VDD = 25 V, L = 95 μH ⎟ ⎟ ⎠ ⎞ ⎜ ⎜ ⎝ ⎛ − ⋅ ⋅ ⋅ = VDD BVDSS BVDSS 2 I L 2 1 ΕAS Test circuit 0 V 15 V |
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