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MP4411 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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MP4411 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
2 / 7 page MP4411 2006-10-27 2 Array Configuration Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance from channel to ambient (4-device operation, Ta = 25°C) ΣRth (ch-a) 28.4 °C/W Thermal resistance from channel to case (4-device operation, Tc = 25°C) ΣRth (ch-c) 4.46 °C/W Maximum lead temperature for soldering purposes (3.2 mm from case for t = 10 s) TL 260 °C Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ― ― ±10 μA Drain cut-off current IDSS VDS = 100 V, VGS = 0 V ― ― 100 μA Drain-source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 100 ― ― V Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 0.8 ― 2.0 V VGS = 4 V, ID = 2 A ― 0.36 0.45 Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 2 A ― 0.28 0.35 Ω Forward transfer admittance |Yfs| VDS = 10 V, ID = 2 A 1.5 3.5 ― S Input capacitance Ciss ― 280 ― pF Reverse transfer capacitance Crss ― 50 ― pF Output capacitance Coss VDS = 10 V, VGS = 0 V, f = 1 MHz ― 105 ― pF Rise time tr ― 20 ― Turn-on time ton ― 50 ― Fall time tf ― 40 ― Switching time Turn-off time toff VIN: tr, tf < 5 ns, duty ≤ 1%, tw = 10 μs ― 170 ― ns Total gate charge (gate-source plus gate-drain) Qg ― 13.5 ― nC Gate-source charge Qgs ― 8.5 ― nC Gate-drain (“miller”) charge Qgd VDD ≈ 80 V, VGS = 10 V, ID = 3 A ― 5 ― nC 10 V VGS VDD ≈ 50 V ID = 2 A VOUT 0 V 5 4 2 3 1 6 12 11 9 10 8 7 |
Similar Part No. - MP4411_07 |
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Similar Description - MP4411_07 |
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