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S-AU83AH Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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S-AU83AH Datasheet(HTML) 2 Page - Toshiba Semiconductor |
2 / 5 page S-AU83AH 2007-06-21 2 PACKAGE OUTLINE ELECTRICAL CHARACTERISTICS (Tc = 25°C, ZG = 50Ω) CHARACTERISTICS SYMBOL TEST CONDITION MIN TYP. MAX UNIT Frequency Range frange — 450 — 520 MHz Output Power Po 32 — — W Power Gain Gp 28 — — dB Total Efficiency ηT 40 — — % Input VSWR VSWRin — — 3.0 — Second Harmonic 2nd HRM VDD = 12.5 V VGG = 5 V Pi = 50 mW ZL = 50 Ω — — -30 dB Third Harmonic 3rd HRM — — -30 dB Ruggedness — 10.5 V ≤ VDD ≤ 16.5 V, 0 V ≤ VGG ≤ VGGajs (VGG = VGGajs @ Po = 32 W) Pi = 50 mW Po = 32 W (Adjusted via VGG @ ZL = 50Ω) VSWR LOAD 20: 1 ALL PHASE (@ 2 s) No Damage — Stability — 10.5 V ≤ VDD ≤ 16.5 V, 0 V ≤ VGG ≤ VGGajs (VGG = VGGajs @ Po = 32W) Pi = 50 mW Po ≤ 32 W (Adjusted via VGG @ ZL = 50Ω) VSWR LOAD 3: 1 ALL PHASE No spurious output of -60 dB or greater — Note 5:The output power is intended to follow the rating provided in Figure 1 in Note 2. Note 6: Stability Measurements are performed under the conditions where VSWR is at 3:1 through all phases over the whole frequency range, and they are guaranteed only under those conditions. Even though it is guaranteed to be stable where VSWR is at 3:1, the VSWR load over the operating frequency should be designed to be 50 Ω .At the same time, ensure that the VSWR load does not deviate much from 50Ω even for a moment, nor deviate even a little from 50Ω continually. The S-AU82AL is not intended for such operations, and proper operation under such conditions is not guaranteed due to the possibilities of heat generation in the module and its applications. ⑤ ① ② ③ ④ ① RF Input ② VGG ③ VDD ④ RF Output ⑤ GROUND(Flange) JEDEC — JEITA — TOSHIBA 5-53P Weight: 35 g Unit: mm |
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