SSM3J15TE datasheet(3/5 Pages) TOSHIBA

Part #	SSM3J15TE

Description	Field Effect Transistor Silicon P Channel MOS Type High Speed Switching Applications Analog Switch Applications

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Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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SSM3J15TE

2007-11-01

3

ID - VDS

0

-50

-100

-150

-200

-250

0

-0.5

-1

-1.5

-2

Drain-Source Voltage VDS(V)

Common Source

Ta=25°C

VGS=-2.3V

-2.5

-2.7

-3.0

-3.3

-4

-5

-10

-7

ID - VGS

-0.01

-0.1

-1

-10

-100

-1000

0

-1-2

-3-4-5

Gate-Source Voltage VGS(V)

Common Source

VDS=-3V

Ta=100°C

RDS(ON) - ID

0

10

20

30

40

-1

-10

-100

-1000

Drain Current ID(mA)

VGS=-2.5V

-4V

RDS(ON) - VGS

0

2

4

6

8

10

12

14

16

18

20

0

-2-4

-6-8

-10

Gate-Source Voltage VGS (V)

Source Common

ID= -1mA

RDS(ON) - Ta

0

10

20

30

-25

0

25

50

75

100

125

150

Common Source

VGS=-2.5V,ID=-1mA

-4V,-10mA

Vth - Ta

0

-0.2

-0.4

-0.6

-0.8

-1

-1.2

-1.4

-1.6

-1.8

-2

-25

0

25

50

75

100

125

150

Common Source

ID=-0.1mA

VDS=-3V

25°C

-25°C

Common Source

Ta=25°C

Ta=100°C

25°

-25°C

Ambient temperature Ta(°C)

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