SSM3J16CT

2007-11-01

1

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type

SSM3J16CT

High Speed Switching Applications

Analog Switch Applications

• Small package

• Low on-resistance

Characteristics

Symbol

Rating

Unit

Drain-Source voltage

−20

V

Gate-Source voltage

±10

V

DC

−100

Drain current

Pulse

−200

mA

Drain power dissipation (Ta

= 25°C)

100

mW

Channel temperature

150

°C

Storage temperature range

−55~150

°C

Note:

Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Mounted on an FR4 board

(10 mm

× 10 mm × 1.0 t, Cu Pad: 100 mm

2

)

Marking (Top View)

Pin Condition (Top View)

Equivalent Circuit

Handling Precaution

When handling individual devices that are not yet mounted on a circuit board, ensure that the environment is protected

against electrostatic discharge. Operators should wear anti-static clothing, and containers and other objects that come

into direct contact with devices should be made of anti-static materials.

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-1J1B

Weight :0.75mg

CST3

３

１２

0.35±0.02

0.15±0.03

0.5±0.03

0.6±0.05

0.05±0.03

1. Gate

2. Source

3. Drain

Polarity mark

Polarity mark (on the top)

1

2

3

S2

12

3