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2SK3766 Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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2SK3766 Datasheet(HTML) 4 Page - Toshiba Semiconductor |
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4 / 6 page  2SK3766 2006-11-06 4 0 100 200 300 400 500 02 46 8 10 12 0 4 8 12 16 20 VＤＳ VＧＳ VＤＤ=400V 90 200 COMMON SOURCE IＤ = 2.0A Tc = 25℃ PULSE TEST 0 1 2 3 4 5 6 -80 -40 0 40 80 120 160 COMMON SOURCE VＤＳ = 10V IＤ = 1mA PULSE TEST 1 10 100 1000 0.1 1 10 100 Ciss Crss Coss COMMON SOURCE VＧＳ = 0V f = 1MHz Tc = 25℃ 0.01 0.1 1 10 -1.0 -0.8 -0.6 -0.4 -0.2 0.0 10 3 1 VＧＳ=0,-1V COMMON SOURCE Tc = 25℃ PULSE TEST 5 RDS (ON) – Tc IDR – VDS Vth – Tc PD – Tc CASE TEMPERATURE Tc (°C) DRAIN −SOURCE VOLTAGE VDS (V) DRAIN −SOURCE VOLTAGE VDS (V) CAPACITANCE – VDS CASE TEMPERATURE Tc (°C) CASE TEMPERATURE Tc (°C) TOTAL GATE CHARGE Qg (nC) DYNAMIC INPUT/OUTPUT CHARACTERISTICS 0 10 2 6 4 8 −40 −80 160 0 40 80 COMMON SOURCE VGS = 10 V PULSE TEST ID = 2 A 0.5 1.0 120 50 10 30 20 40 0 0 80 120 200 40 160 |
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