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2SK3845 Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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2SK3845 Datasheet(HTML) 3 Page - Toshiba Semiconductor |
3 / 6 page 2SK3845 2006-11-17 3 ID – VDS Drain −source voltage VDS (V) 0 100 20 60 40 80 0 0.2 1.0 0.4 0.6 0.8 10 8 6 4.3 5 4.5 VGS = 4 V Common source Tc = 25°C Pulse test ID – VDS Drain −source voltage VDS (V) 0 200 40 120 80 160 1 0 5 23 4 10 8 6 4.3 4.5 5.2 5 4.8 VGS = 4 V Common source Tc = 25°C Pulse test ID – VGS Gate −source voltage VGS (V) 0 160 40 80 120 2 0 8 46 100 25 Tc = −55°C Common source VDS = 20 V Pulse test VDS – VGS Gate −source voltage VGS (V) 0 1.0 0.2 0.6 0.4 0.8 4 0 20 8 12 16 35 70 ID = 18 A Common source Tc = 25°C Pulse test ⎪Yfs⎪ − ID Drain current ID (A) 1 1000 100 10 1 1000 10 Common source VDS = 20 V Pulse test Tc = −55°C 25 100 RDS (ON) − ID Drain current ID (A) 1 10 100 1 10 1000 VGS = 10, 15 V Common source Tc = 25°C Pulse test 100 100 |
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