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2SK3869 Datasheet(PDF) 5 Page - Toshiba Semiconductor |
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2SK3869 Datasheet(HTML) 5 Page - Toshiba Semiconductor |
5 / 6 page 2SK3869 2006-11-06 5 0.01 0.1 1 10 100 1 10 100 1000 0 100 200 300 400 25 50 75 100 125 150 0.01 10μ 0.1 1 10 100μ 1m 10m 100m 1 10 T PDM t Duty = t/T Rth (ch-c) = 3.125°C/W Duty=0.5 0.2 0.1 0.05 0.02 0.01 0.001 rth − tw SAFE OPERATING AREA EAS − Tch PULSE WIDTH tw (S) CHANNEL TEMPERATURE (INITIAL) Tch (°C) −15 V 15 V TEST CIRCUIT WAVE FORM IAR BVDSS VDD VDS RG = 25 Ω VDD = 90 V, L = 3.7 mH ⎟ ⎟ ⎠ ⎞ ⎜ ⎜ ⎝ ⎛ − ⋅ ⋅ ⋅ = VDD BVDSS BVDSS 2 I L 2 1 ΕAS SINGLE PULSE DRAIN −SOURCE VOLTAGE VDS (V) *: SINGLE NONPETITIVE PULSE Tc = 25°C Curves must be derated linearly with increase in temperature. ID max (CONTINUOUS) 100 μs * DC OPERATION Tc = 25°C 1 ms * VDSS max ID max (PULSED) * |
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