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RN1101F Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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RN1101F Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 8 page RN1101F ∼RN1106F 2007-11-01 1 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1101F,RN1102F,RN1103F RN1104F,RN1105F,RN1106F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2101F~RN2106F Equivalent Circuit And Bias Resister Values Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage RN1101F~1106F VCEO 50 V RN1101F~1104F 10 Emitter-base voltage RN1105F, 1106F VEBO 5 V Collector current IC 100 mA Collector power dissipation PC 100 mW Junction temperature Tj 150 °C Storage temperature range RN1101F~1106F Tstg −55~150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). JEDEC ― EIAJ ― TOSHIBA 2-2H1A Weight: 2.3 mg Unit in mm Type No. R1 (kΩ) R2 (kΩ) RN1101F 4.7 4.7 RN1102F 10 10 RN1103F 22 22 RN1104F 47 47 RN1105F 2.2 47 RN1106F 4.7 47 |
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