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MT6L57AE Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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MT6L57AE Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 3 page MT6L57AE 2007-11-01 1 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L57AE VHF~UHF Band Low Noise Amplifier Applications • Two devices are built in to the super-thin and extreme super mini (6 pins) package: ES6 Mounted Devices Q1: SSM (TESM) Q2: SSM (TESM) Three-pins (SSM/TESM) mold products are corresponded. MT3S06S (MT3S06T) MT3S04AS (MT3S04AT) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Q1 Q2 Unit Collector-base voltage VCBO 10 10 V Collector-emitter voltage VCEO 5 5 V Emitter-base voltage VEBO 1.5 2 V Collector current IC 15 40 mA Base current IB 7 10 mA Collector power dissipation PC (Note 1) 100 mW Junction temperature Tj 125 °C Storage temperature range Tstg −55~125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total power dissipation of Q1 and Q2. Marking Pin Assignment (top view) Unit: mm JEDEC ― JEITA ― TOSHIBA 2-2N1C Weight: 0.003 g (typ.) |
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