MT6L57AE

2007-11-01

1

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type

MT6L57AE

VHF~UHF Band Low Noise Amplifier Applications

• Two devices are built in to the super-thin and extreme super mini (6

pins) package: ES6

Mounted Devices

Q1: SSM (TESM)

Q2: SSM (TESM)

Three-pins (SSM/TESM) mold

products are corresponded.

MT3S06S

(MT3S06T)

MT3S04AS

(MT3S04AT)

Characteristics

Symbol

Q1

Q2

Unit

Collector-base voltage

10

10

V

Collector-emitter voltage

5

5

V

Emitter-base voltage

1.5

2

V

Collector current

15

40

mA

Base current

7

10

mA

Collector power dissipation

(Note 1)

100

mW

Junction temperature

125

°C

Storage temperature range

−55~125

°C

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Total power dissipation of Q1 and Q2.

Marking

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-2N1C

Weight: 0.003 g (typ.)