015AZ2.0~015AZ24

2007-11-01

1

TOSHIBA Diode Silicon Epitaxial Planar Type

015AZ2.0~015AZ24

Constant-Voltage Regulation Applications

Small package

Nominal voltage tolerance of about ±2.5%

(2.0 V~24 V)

Characteristic

Symbol

Rating

Unit

Power dissipation

P*

150

mW

Junction temperature

125

°C

Storage temperature range

−55~125

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba

Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate,

etc).

* Mounted on a glass-epoxy circuit board of 20 × 20 mm,

Pad dimensions of 4 × 4 mm.

Electrical Characteristics

(See pages 2~3.)

Marking

Example 1: 015AZ2.4-X

Example 2: 015AZ2.4-Z

Example 3: 015AZ12-X

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

1-1G1A

Weight: 1.4 mg (typ.)

24

Decimal point

Voltage rank

: VZ = (VZ ranking voltage) X 0.1, nil: VZ = VZ ranking

24

24

12

VZ additional ranking

upper --- X rank , middle --- Y rank , lower --- Z rank