BIPOLARICS, INC.
Part Number B20V140
G
PE
= 14.0 dB @ 1.0 GHz
P
1dB
Power output at 1 dB compression:
f = 1.0 GHz
dBm
27.0
G
1dB
Gain at 1dB compression:
f = 1.0 GHz
dB
9.0
Collector Efficiency
Class A
%
30
C
CB
Collector Base Capacitance:
f = 1 MHz, I
E
= 0
pF
0.7
1.0
h
FE
Forward Current Transfer Ratio: V
CE
= 8V, I
C
=50 mA
20
60
100
P
T
Total Power Dissipation
W
1.5
η
V
CBO
Collector-Base Voltage
40
V
SYMBOL
PARAMETERS
RATING
UNITS
SYMBOL
PARAMETERS & CONDITIONS
UNIT
MIN.
TYP.
MAX.
V
CE
=15V, I
C
= 100 mA, Class A, unless stated
PRODUCT DATA SHEET
SILICON MICROWAVE POWER TRANSISTOR
V
CEO
Collector-Emitter Voltage
20
V
V
EBO
Emitter-Base Voltage
3.0
V
I
C
Collector Current (instantaneous)
160
mA
T
J
Junction Temperature
200
oC
T
STG
Storage Temperature
-65 to +150
oC
DESCRIPTION AND APPLICATIONS:
Bipolarics' B20V140 is a high performance, low cost silicon bipolar
transistor intended for linear power applications at frequencies of 0.5 to
2.6 GHz. Uniformity and reliability are assured by the use of advanced
process techniques: ion implanted junctions, ion
implanted ballast
resistors and gold metallization. When the B20V140 is bonded common
emitter, linear output power of 1 Watt can be achieved. By driving part
type B20V180 or B20V1160 combination thereof, higher output power
can be achieved.
Absolute Maximum Ratings:
FEATURES:
• High Output Power
27.0 dBm, P
1dB
@ 1.0 GHz
• High Gain Bandwidth Product
f
t
= 6.0 GHz @ I
C
= 100 mA
• High Gain
PERFORMANCE DATA:
• Electrical Characteristics (T
A
= 25
oC)
• Ceramic, BeO & Stripline packages
available
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