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ISL9V5036S3ST Datasheet(PDF) 5 Page - Fairchild Semiconductor |
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ISL9V5036S3ST Datasheet(HTML) 5 Page - Fairchild Semiconductor |
5 / 8 page ©2004 Fairchild Semiconductor Corporation ISL9V5036S3ST / ISL9V5036P3 / ISL9V5036S3 Rev. C3, October 2004 Figure 13. Capacitance vs Collector to Emitter Voltage Figure 14. Gate Charge Figure 15. Breakdown Voltage vs Series Gate Resistance Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case Typical Characteristics (Continued) VCE, COLLECTOR TO EMITTER VOLTAGE (V) 3000 1000 500 1500 010 5 152025 0 CIES FREQUENCY = 1 MHz COES CRES 2500 2000 QG, GATE CHARGE (nC) 0 2 4 8 0 1020 3040 50 3 5 7 6 1 IG(REF) = 1mA, RL = 0.6Ω, TJ = 25°C VCE = 6V VCE = 12V RG, SERIES GATE RESISTANCE (kΩ) 360 352 348 356 10 2000 1000 3000 344 100 354 350 358 346 TJ = - 40°C TJ = 25°C TJ = 175°C ICER = 10mA 342 340 T1, RECTANGULAR PULSE DURATION (s) 100 10-2 10-1 10-2 10-3 10-4 10-5 10-1 10-6 t1 t2 PD DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZθJC X RθJC) + TC 0.5 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE 10-3 10-4 |
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