NCP1015 datasheet(9/22 Pages) ONSEMI

Part #	NCP1015

Description	Self-Supplied Monolithic Switcher for Low Standby- Power Offline SMPS

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Manufacturer	ONSEMI [ON Semiconductor]

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NCP1015

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9

Figure 15. NCP1015 Facing a Fault Condition (Vin = 150 Vdc)

Tstart

Tsw

TLatch

1 V Ripple

Latch-off

Level

The rising slope from the latch-off level up to 8.5 V is

expressed by:

P

DSS + Vin @ ICC1

tstart + D

V1

@ C

IC1

The time during which the IC actually pulses is given by:

tsw + D

V2

@ C

ICC1

Finally, the latch-off time can be derived using the same

formula topology:

t

latch +

DV3 @ C

ICC2

From these three definitions, the burst duty-cycle D can

be computed:

D

+

tsw

tstart ) tsw ) tlatch

(eq. 2)

D

+

DV2

ICC1

@ DV2

ICC1 )

DV1

IC1 )

DV3

ICC2

(eq. 3)

Feeding the equation with values extracted from the

parameter section gives a typical duty-cycle D of 13%,

precluding any lethal thermal runaway while in a fault

condition.

DSS Internal Dissipation

The Dynamic Self-Supplied pulls the energy out from the

drain pin. In the Flyback-based converters, this drain level

can easily go above 600 V peak and thus increase the stress

on the DSS startup source. However, the drain voltage

evolves with time and its period is small compared to that of

the DSS. As a result, the averaged dissipation, excluding

capacitive losses, can be derived by:

P

DSS + ICC1 @t VDS(t) u

(eq. 4)

Figure 16 shows a typical drain-ground wave-shape

where leakage effects have been removed:

Figure 16. A Typical Drain-ground Waveshape

where Leakage Effects are Not Accounted for

Vds(t)

Vin

Vr

toff

dt

ton

t

Tsw

By looking at Figure 16 the average result can easily be

derived by additive square area calculation:

t V

DS(t) u+ Vin @ (1 * D) ) Vr @

t

off

tsw

(eq. 5)

By developing Equation 5 we obtain:

t V

DS(t) u+ Vin * Vin @

ton

tsw

) Vr @

t

off

tsw

(eq. 6)

toff can be expressed by:

t

off + Ip @

Lp

Vr

(eq. 7)

ton can be evaluated by:

ton + Ip @

Lp

V

in

(eq. 8)

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