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M58BW016FB70ZA3FF Datasheet(PDF) 1 Page - STMicroelectronics |
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M58BW016FB70ZA3FF Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 69 page October 2007 Rev 14 1/69 1 M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit (512 Kb x 32, boot block, burst) 3 V supply Flash memories Features ■ Supply voltage –VDD = 2.7 V to 3.6 V for Program, Erase and Read –VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers –VPP = 12 V for Fast Program (optional) ■ High performance – Access times: 70, 80 ns – 56 MHz effective zero wait-state Burst Read – Synchronous Burst Read – Asynchronous Page Read ■ Hardware block protection –WP pin for Write Protect of the 4 outermost parameter blocks and all main blocks –RP pin for Write Protect of all blocks ■ Optimized for FDI drivers – Fast Program / Erase Suspend latency time < 6 µs – Common Flash interface ■ Memory blocks – 8 parameters blocks (top or bottom) – 31 main blocks ■ Low power consumption – 5 µA typical Deep Power-down – 60 µA typical standby for M58BW016DT/B 150 µA typical standby for M58BW016FT/B – Automatic standby after Asynchronous Read ■ Electronic signature – Manufacturer code: 20h – Top device code: 8836h – Bottom device code: 8835h ■ ECOPACK® packages available PQFP80 (T) BGA LBGA80 10 × 12 mm www.st.com |
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