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TC7SG86FU Datasheet(PDF) 4 Page - Toshiba Semiconductor

Part # TC7SG86FU
Description  EXCLUSIVE OR Gate
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TC7SG86FU Datasheet(HTML) 4 Page - Toshiba Semiconductor

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TC7SG86FU
2007-11-01
4
AC Electrical Characteristics (input tr = tf = 3 ns)
Ta
= 25°C
Ta
= −40~85°C
Characteristics
Symbol
Test Condition
VCC (V)
Min
Typ.
Max
Min
Max
Unit
0.9
23.0
1.1~1.3
11.7
20.9
1.0
39.1
1.4~1.6
6.7
10.0
1.0
11.8
1.65~
1.95
5.1
6.6
1.0
7.6
2.3~2.7
3.4
4.1
1.0
4.7
CL = 10 pF,
RL = 1 MΩ
3.0~3.6
2.7
3.3
1.0
3.9
0.9
23.7
1.1~1.3
11.9
22.8
1.0
39.4
1.4~1.6
6.7
9.9
1.0
11.9
1.65~
1.95
5.1
7.3
1.0
7.5
2.3~2.7
3.4
4.7
1.0
5.3
CL = 15 pF,
RL = 1 MΩ
3.0~3.6
2.7
3.6
1.0
4.1
0.9
32.1
1.1~1.3
15.7
31.4
1.0
59.4
1.4~1.6
8.7
13.9
1.0
16.9
1.65~
1.95
6.5
9.8
1.0
10.2
2.3~2.7
4.2
6.0
1.0
6.5
Propagation delay time
tPLH
tPHL
CL = 30 pF,
RL = 1 MΩ
3.0~3.6
3.4
4.7
1.0
5.1
ns
Input capacitance
CIN
3.6
3
pF
Power dissipation capacitance
CPD
(Note 13)
0.9~3.6
9
pF
Note 13: CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating
current consumption without load.
Average operating current can be obtained by the equation:
ICC (opr) = CPD・VCC・fIN + ICC


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