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TC7SG86FU Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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TC7SG86FU Datasheet(HTML) 4 Page - Toshiba Semiconductor |
4 / 6 page TC7SG86FU 2007-11-01 4 AC Electrical Characteristics (input tr = tf = 3 ns) Ta = 25°C Ta = −40~85°C Characteristics Symbol Test Condition VCC (V) Min Typ. Max Min Max Unit 0.9 ⎯ 23.0 ⎯ ⎯ ⎯ 1.1~1.3 ⎯ 11.7 20.9 1.0 39.1 1.4~1.6 ⎯ 6.7 10.0 1.0 11.8 1.65~ 1.95 ⎯ 5.1 6.6 1.0 7.6 2.3~2.7 ⎯ 3.4 4.1 1.0 4.7 CL = 10 pF, RL = 1 MΩ 3.0~3.6 ⎯ 2.7 3.3 1.0 3.9 0.9 ⎯ 23.7 ⎯ ⎯ ⎯ 1.1~1.3 ⎯ 11.9 22.8 1.0 39.4 1.4~1.6 ⎯ 6.7 9.9 1.0 11.9 1.65~ 1.95 ⎯ 5.1 7.3 1.0 7.5 2.3~2.7 ⎯ 3.4 4.7 1.0 5.3 CL = 15 pF, RL = 1 MΩ 3.0~3.6 ⎯ 2.7 3.6 1.0 4.1 0.9 ⎯ 32.1 ⎯ ⎯ ⎯ 1.1~1.3 ⎯ 15.7 31.4 1.0 59.4 1.4~1.6 ⎯ 8.7 13.9 1.0 16.9 1.65~ 1.95 ⎯ 6.5 9.8 1.0 10.2 2.3~2.7 ⎯ 4.2 6.0 1.0 6.5 Propagation delay time tPLH tPHL CL = 30 pF, RL = 1 MΩ 3.0~3.6 ⎯ 3.4 4.7 1.0 5.1 ns Input capacitance CIN ⎯ 3.6 ⎯ 3 ⎯ ⎯ ⎯ pF Power dissipation capacitance CPD (Note 13) 0.9~3.6 ⎯ 9 ⎯ ⎯ ⎯ pF Note 13: CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC (opr) = CPD・VCC・fIN + ICC |
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