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STP8NM50 Datasheet(PDF) 4 Page - STMicroelectronics |
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STP8NM50 Datasheet(HTML) 4 Page - STMicroelectronics |
4 / 14 page Electrical characteristics STP8NM50 - STP8NM50FP 4/14 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 250µA, VGS= 0 500 V IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating, VDS = Max rating @125°C 1 10 µA µA IGSS Gate body leakage current (VDS = 0) VGS = ±30 V ± 100 nA VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA 3 4 5 V RDS(on) Static drain-source on resistance VGS= 10 V, ID= 2.5A 0.7 0.8 Ω Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit gfs (1) 1. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward transconductance VDS > ID(on) x RDS(on)max, ID= 2.5A 2.4 S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS =25V, f=1 MHz, VGS=0 415 88 12 pF pF pF Coss eq. (2) 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Equivalent ouput capacitance VGS=0, VDS =0V to 400V 50 pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD=400V, ID = 5A VGS =10V (see Figure 16) 13 4 6 nC nC nC RG Gate input resistance f=1MHz Gate DC Bias = 0 Test signal level = 20mV Open drain 3 Ω |
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