TC7SH32FE datasheet(2/5 Pages) TOSHIBA

Part #	TC7SH32FE

Description	2 Input OR Gate

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Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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2 / 5 page

TC7SH32FE

2004-02-08

2

Logic Diagram

Truth Table

A

B

Y

L

H

L

H

OUT Y

> 1

IN A

IN B

Recommended Operating Conditions

Characteristics

Symbol

Rating

Unit

Supply voltage

VCC

2～5.5

V

Input voltage

VIN

0~5.5

V

Output voltage

VOUT

0~ VCC

V

Operating temperature

Topr

−40~85

°C

0~100 ( VCC = 3.3 V ± 0.3 V )

Input rise and fall time

dt/dv

0~20 ( VCC = 5 V ± 0.5 V )

ns/V

Electrical Characteristics

DC Characteristics

Ta

= 25°C

Ta

= −40~85°C

Characteristics

Symbol

Test

Circuit

Test Condition

VCC (V)

Min

Typ.

Max

Min

Max

Unit

2.0

1.5

⎯

1.5

⎯

High-level input

voltage

VIH

⎯

3.0~5.5

VCC

× 0.7

⎯

VCC

× 0.7

⎯

V

2.0

⎯

0.5

⎯

0.5

Low-level input

voltage

VIL

⎯

3.0~5.5

⎯

VCC

× 0.3

⎯

VCC

× 0.3

V

2.0

1.9

2.0

⎯

1.9

⎯

3.0

2.9

3.0

⎯

2.9

⎯

IOH = −50 µA

4.5

4.4

4.5

⎯

4.4

⎯

IOH = −4 mA

3.0

2.58

⎯

2.48

⎯

High-level

output voltage

VOH

⎯

VIN = VIH

or VIL

IOH = −8 mA

4.5

3.94

⎯

3.80

⎯

V

2.0

⎯

0

0.1

⎯

0.1

3.0

⎯

0

0.1

⎯

0.1

IOL = 50 µA

4.5

⎯

0

0.1

⎯

0.1

IOL = 4 mA

3.0

⎯

0.36

⎯

0.44

Low-level output

voltage

VOL

⎯

VIN = VIL

IOL = 8 mA

4.5

⎯

0.36

⎯

0.44

V

Input leakage

current

IIN

⎯

VIN = 5.5 V or GND

0~5.5

⎯

±0.1

⎯

±1.0

µA

Quiescent

supply current

ICC

⎯

VIN = VCC or GND

5.5

⎯

2.0

⎯

20.0

µA

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TC7SH32FE Datasheet(PDF) 2 Page - Toshiba Semiconductor

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