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TC7WG34FU Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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TC7WG34FU Datasheet(HTML) 4 Page - Toshiba Semiconductor |
4 / 7 page TC7WG34FU/FK 2007-11-01 4 AC Characteristics (Input: tr = tf = 3 ns) Ta = 25°C Ta = −40~85°C Characteristics Symbol Test Condition VCC (V) Min Typ. Max Min Max Unit 0.9 ⎯ 24.4 ⎯ ⎯ ⎯ 1.1~1.3 ⎯ 11.6 21.7 1.0 40.5 1.4~1.6 ⎯ 6.5 9.8 1.0 11.6 1.65~ 1.95 ⎯ 4.9 7.0 1.0 7.6 2.3~2.7 ⎯ 3.2 4.4 1.0 4.9 CL = 10 pF, RL = 1 MΩ 3.0~3.6 ⎯ 2.4 3.5 1.0 4.1 0.9 ⎯ 26.9 ⎯ ⎯ ⎯ 1.1~1.3 ⎯ 12.7 24.2 1.0 42.1 1.4~1.6 ⎯ 7.1 10.7 1.0 12.9 1.65~ 1.95 ⎯ 5.3 7.5 1.0 7.7 2.3~2.7 ⎯ 3.5 4.8 1.0 5.5 CL = 15 pF, RL = 1 MΩ 3.0~3.6 ⎯ 2.7 3.8 1.0 4.4 0.9 ⎯ 37.0 ⎯ ⎯ ⎯ 1.1~1.3 ⎯ 17.1 33.9 1.0 64.1 1.4~1.6 ⎯ 9.3 14.3 1.0 17.4 1.65~ 1.95 ⎯ 6.9 9.8 1.0 10.2 2.3~2.7 ⎯ 4.6 6.2 1.0 6.6 Propagation delay time tpLH tpHL CL = 30 pF, RL = 1 MΩ 3.0~3.6 ⎯ 3.7 4.8 1.0 5.2 ns Input capacitance CIN ⎯ 3.6 ⎯ 3 ⎯ ⎯ ⎯ pF Power dissipation capacitance CPD (Note 13) 0.9 ~ 3.6 ⎯ 10 ⎯ ⎯ ⎯ pF Note 13: CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC (opr.) = CPD・VCC・fIN + ICC/3 |
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