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TC7SZ38F Datasheet(PDF) 4 Page - Toshiba Semiconductor

Part No. TC7SZ38F
Description  2-Input NAND Gate(Open Drain Output)
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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TC7SZ38F/FU
2007-11-01
4
AC Characteristics (unless otherwise specified, Input: tr = tf = 3 ns)
Ta
= 25°C
Ta
= −40~85°C
Characteristics
Symbol
Test Condition
VCC (V)
Min
Typ.
Max
Min
Max
Unit
1.65
1.5
6.5
12.7
1.5
13.2
1.8
1.5
5.4
10.5
1.5
11.0
2.5
± 0.2
0.8
3.5
7.0
0.8
7.5
3.3
± 0.3
0.8
2.8
5.0
0.8
5.2
tpZL
CL = 50 pF,
RL = 500 Ω
5.0
± 0.5
0.5
2.2
4.3
0.5
4.5
ns
1.65
1.5
5.5
12.7
1.5
13.2
1.8
1.5
4.6
10.5
1.5
11.0
2.5
± 0.2
0.8
3.0
7.0
0.8
7.5
3.3
± 0.3
0.8
2.1
5.0
0.8
5.2
Propagation delay time
tpLZ
CL = 50 pF,
RL = 500 Ω
5.0
± 0.5
0.5
1.3
4.3
0.5
4.5
ns
Input capacitance
CIN
0~5.5
4
pF
Output capacitance
COUT
5.5
3
pF
3.3
6.7
Power dissipation capacitance
CPD
(Note 4)
5.5
13
pF
Note 4: CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating
current consumption without load.
Average operating current can be obtained by the equation:
ICC (opr) = CPD・VCC・fIN + ICC
AC Characteristics Measurement Circuit
Characteristics
Switch
tpLZ, tpZL
VCC × 2
Measure
VCC × 2
Output
Switch




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