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TC7SZ38F Datasheet(PDF) 1 Page - Toshiba Semiconductor

Part No. TC7SZ38F
Description  2-Input NAND Gate(Open Drain Output)
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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TC7SZ38F/FU
2007-11-01
1
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7SZ38F,TC7SZ38FU
2-Input NAND Gate(Open Drain Output)
Features
• High output drive: 24 mA (min) @VCC = 3 V
• Super high speed operation:
tpz = 2.2 ns(typ.)@VCC = 5 V, 50 pF
• Operation voltage range: VCC (opr) = 1.80~5.5 V
• 5.5V tolerant inputs.
• Power down protection is provided on output.
• Matches the performance of TC74LCX series when operated
at 3.3 V VCC.
Marking
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Power supply voltage
VCC
−0.5~6
V
DC input voltage
VIN
−0.5~6
V
DC output voltage
VOUT
−0.5~6
V
Input diode current
IIK
−20
mA
Output diode current
IOK
−20
mA
DC output current
IOUT
50
mA
DC VCC/ground current
ICC
±50
mA
Power dissipation
PD
200
mW
Storage temperature
Tstg
−65~150
°C
Lead temperature (10s)
TL
260
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
TC7SZ38F
TC7SZ38FU
Weight
SSOP5-P-0.95
: 0.016 g (typ.)
SSOP5-P-0.65A
: 0.006 g (typ.)
Type name
J D
Pin Assignment (top view)
1
2
3
5
4
IN A
IN B
GND
VCC
OUT Y




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