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TC7SZ38F Datasheet(PDF) 3 Page - Toshiba Semiconductor

Part No. TC7SZ38F
Description  2-Input NAND Gate(Open Drain Output)
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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 3 page
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TC7SZ38F/FU
2007-11-01
3
Electrical Characteristics
DC Characteristics
Ta
= 25°C
Ta
= −40~85°C
Characteristics
Symbol
Test Condition
VCC (V)
Min
Typ.
Max
Min
Max
Unit
1.8
0.75
×
VCC
0.75
×
VCC
High level
VIH
2.3~5.5
0.7
×
VCC
0.7
×
VCC
1.8
0.25
×
VCC
0.25
×
VCC
Input voltage
Low level
VIL
2.3~5.5
0.3
×
VCC
0.3
×
VCC
V
High level output
leakage current
ILKG
VIN = VIL
1.8~5.5
±5
±10
μA
1.8
0
0.1
0.1
2.3
0
0.1
0.1
3.0
0
0.1
0.1
IOL = 100 μA
4.5
0
0.1
0.1
IOL = 8 mA
2.3
0.1
0.3
0.3
IOL = 16 mA
3.0
0.15
0.4
0.4
IOL = 24 mA
3.0
0.22
0.55
0.55
Output voltage
Low level
VOL VIN = VIL
IOL = 32 mA
4.5
0.22
0.55
0.55
Input leakage current
IIN
VIN = 5.5 V or GND
0~5.5
±1
±10
μA
Power off leakage current
IOFF VIN or VOUT = 5.5 V
0.0
1
10
μA
Quiescent supply current
ICC
VIN = VCC or GND
5.5
2
20
μA




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