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TC7SZU04AFE_07 Datasheet(PDF) 1 Page - Toshiba Semiconductor

Part No. TC7SZU04AFE_07
Description  Inverter
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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TC7SZU04AFE
2007-11-01
1
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7SZU04AFE
Inverter
Features
• High output drive: ±16 mA (typ.)
@VCC = 3 V
• Low quiescent power: ICC < 2 μA (max)
@VCC = 5.5 V, Ta = 25°C
• Operation voltage range: VCC (opr) = 1.8~5.5 V
• Supply voltage data retention: VCC = 1.5~5.5 V
• Latch-up performance: ±500 mA
• ESD performance: Human body model > ±2000 V
Machine model > ±200 V
• Power down protection is provided on all inputs.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Supply voltage range
VCC
−0.5~6
V
DC input voltage
VIN
−0.5~6
V
DC output voltage
VOUT
−0.5~VCC + 0.5
V
Input diode current
IIK
±20
mA
Output diode current
IOK
±20
mA
DC output current
IOUT
±50
mA
DC VCC/ground current
ICC
±50
mA
Power dissipation
PD
150
mW
Storage temperature
Tstg
−65~150
°C
Lead temperature (10 s)
TL
260
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Weight: 0.003 g (typ.)




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