DF3A8.2LFV

2007-11-01

1

TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type

DF3A8.2LFV

Product for Use Only as Protection against Electrostatic

Discharge (ESD)

* This product is for protection against electrostatic discharge (ESD)

only and is not intended for any other usage, including without

limitation, the constant voltage diode application.

• The mounting of two devices in an ultra-compact package enables a

reduction in the number of parts and in the mounting cost.

Characteristic

Symbol

Rating

Unit

Power dissipation

P

150 *

mW

Junction temperature

150

°C

Storage temperature range

−55~150

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate, etc).

*: Mounted on an FR4 board (25.4 mm

× 25.4 mm × 1.6 mmt)

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

Zener voltage

7.8

8.2

8.6

V

Dynamic impedance

⎯

⎯

60

Ω

Reverse current

⎯

⎯

0.5

μA

Terminal capacitance

(between Cathode and Anode)

⎯

5.0

⎯

pF

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

1-1Q1B

Weight: 0.0015 g (typ.)

1. CATHODE1

2. CATHODE2

3. ANODE

VESM

1

2

3

0.8±0.05

1.2±0.05

0.5mm

0.45mm

0.45mm

0.4mm