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DF3A8.2LFV Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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DF3A8.2LFV Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 3 page DF3A8.2LFV 2007-11-01 1 TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF3A8.2LFV Product for Use Only as Protection against Electrostatic Discharge (ESD) * This product is for protection against electrostatic discharge (ESD) only and is not intended for any other usage, including without limitation, the constant voltage diode application. • The mounting of two devices in an ultra-compact package enables a reduction in the number of parts and in the mounting cost. • Low terminal capacitance: CT = 5.0 pF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Power dissipation P 150 * mW Junction temperature Tj 150 °C Storage temperature range Tstg −55~150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mmt) Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Zener voltage VZ IZ = 5 mA 7.8 8.2 8.6 V Dynamic impedance ZZ IZ = 5 mA ⎯ ⎯ 60 Ω Reverse current IR VR = 5 V ⎯ ⎯ 0.5 μA Terminal capacitance (between Cathode and Anode) CT VR = 0 V, f = 1 MHz ⎯ 5.0 ⎯ pF Unit: mm JEDEC ― JEITA ― TOSHIBA 1-1Q1B Weight: 0.0015 g (typ.) 1. CATHODE1 2. CATHODE2 3. ANODE VESM 1 2 3 0.8±0.05 1.2±0.05 0.5mm 0.45mm 0.45mm 0.4mm |
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