GT10J321 datasheet(4/7 Pages) TOSHIBA

Part #	GT10J321

Description	Silicon N Channel IGBT High Power Switching Applications

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Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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4 / 7 page

GT10J321

2006-11-01

4

Gate resistance RG (Ω)

Switching Time td(on), tr, ton – RG

Collector current IC (A)

Switching Time td(on), tr, ton – IC

Gate resistance RG (Ω)

Switching Time td(off), tf, toff – RG

Collector current IC (A)

Switching Time td(off), tf, toff – IC

Gate resistance RG (Ω)

Switching Loss Eon, Eoff – RG

Collector current IC (A)

Switching Loss Eon, Eoff – IC

2

0

1

0.01

10

4

6

8

10

0.1

1

10

100

1000

1

0.01

0.1

Eoff

Eon

Common emitter

VCC = 300 V

VGG = 15 V

IC = 10 A

: Tc

= 25°C

: Tc

= 125°C

(Note 2)

2

0

0.01

4

6

8

10

0.1

Eoff

Eon

Common emitter

VCC = 300 V

VGG = 15 V

RG = 68 Ω

: Tc

= 25°C

: Tc

= 125°C

(Note 2)

1

0.1

10

0.01

1

10

100

1000

tr

ton

Common emitter

VCC = 300 V

VGG = 15 V

IC = 10 A

: Tc

= 25°C

: Tc

= 125°C

td(on)

1

0.1

10

0.01

1

10

100

1000

toff

td(off)

tf

Common emitter

VCC = 300 V

VGG = 15 V

IC = 10 A

: Tc

= 25°C

: Tc

= 125°C

2

0

1

0.01

10

4

6

8

10

0.1

Common emitter

VCC = 300 V

VGG = 15 V

RG = 68 Ω

: Tc

= 25°C

: Tc

= 125°C

tf

toff

td(off)

tr

td(on)

ton

Common emitter

VCC = 300 V

VGG = 15 V

RG = 68 Ω

: Tc

= 25°C

: Tc

= 125°C

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GT10J321 Datasheet(PDF) 4 Page - Toshiba Semiconductor

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