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1SV288 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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1SV288 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 3 page 1SV288 2007-11-01 1 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV288 CATV Tuning • High capacitance ratio: C2 V/C25 V = 16 (typ.) • Low series resistance: rs = 0.92 Ω (typ.) • Excellent C-V characteristics, and small tracking error. • Useful for small size tuner. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage VR 30 V Peak reverse voltage VRM 35 (RL = 10 kΩ)V Junction temperature Tj 125 °C Storage temperature range Tstg −55~125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Reverse voltage VR IR = 1 μA 30 ⎯ ⎯ V Reverse current IR VR = 28 V ⎯ ⎯ 10 nA Capacitance C2 V VR = 2 V, f = 1 MHz 41 45 49.5 pF Capacitance C25 V VR = 25 V, f = 1 MHz 2.5 2.8 3.2 pF Capacitance ratio C2 V/C25 V ⎯ 15 16 ⎯ ⎯ Series resistance rs VR = 5 V, f = 470 MHz ⎯ 0.92 1.05 Ω Note 1: Available in matched group for capacitance to 2.5%. (min) C (min) C (max) C − <= 0.025 (VR = 2~25 V) Marking Unit: mm JEDEC ― JEITA ― TOSHIBA 1-1E1A Weight: 0.004 g (typ.) |
Similar Part No. - 1SV288_07 |
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Similar Description - 1SV288_07 |
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