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1SV293 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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1SV293 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 2 page 1SV293 2007-11-01 1 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV293 VCO for UHF Band Radio • Ultra low series resistance: rs = 0.26 Ω (typ.) • Useful for small size set Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage VR 10 V Junction temperature Tj 125 °C Storage temperature range Tstg −55~125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Reverse voltage VR IR = 1 μA 10 ⎯ ⎯ V Reverse current IR VR = 10 V ⎯ ⎯ 3 nA Capacitance C1 V VR = 1 V, f = 1 MHz 18.0 ⎯ 20.0 pF Capacitance C4 V VR = 4 V, f = 1 MHz 10.1 ⎯ 11.6 pF Capacitance ratio C1 V/C4 V ⎯ 1.55 ⎯ ⎯ ⎯ Series resistance rs VR = 1 V, f = 470 MHz ⎯ 0.26 0.4 Ω Marking Unit: mm JEDEC ― JEITA ― TOSHIBA 1-1E1A Weight: 0.004 g (typ.) |
Similar Part No. - 1SV293_07 |
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