GT20J101_06 datasheet(4/6 Pages) TOSHIBA

Part #	GT20J101

Description	Silicon N Channel IGBT High Power Switching Applications

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Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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4 / 6 page

GT20J101

2006-11-01

4

Gate resistance RG (Ω)

Switching time ton, tr – RG

Collector current IC (A)

Switching time ton, tr – IC

Gate resistance RG (Ω)

Switching time toff, tf – RG

Collector current IC (A)

Switching time toff, tf – IC

Gate resistance RG (Ω)

Switching loss Eon, Eoff – RG

Collector current IC (A)

Switching loss Eon, Eoff – IC

1

0.5

0.3

0.05

0.1

3

tr

ton

Common emitter

VCC = 300 V

VGG = ±15 V

IC = 20 A

: Tc

= 25°C

: Tc

= 125°C

0.03

3

10

30

100

300

1000

4

0

1

0.3

0.01

0.03

3

8

12

16

20

Common emitter

VCC = 300 V

VGG = ±15 V

RG = 56 Ω

: Tc

= 25°C

: Tc

= 125°C

tr

ton

0.1

0.05

0.5

0.1

0.3

1

3

0.05

0.5

0.03

Common emitter

VCC = 300 V

VGG = ±15 V

IC = 20 A

: Tc

= 25°C

: Tc

= 125°C

10

30

100

3

1000

300

toff

tf

0.3

0

4

8

12

16

0.1

3

1

20

0.01

Common emitter

VCC = 300 V

VGG = ±15 V

RG = 56 Ω

: Tc

= 25°C

: Tc

= 125°C

tf

toff

0.03

0.5

0.05

0

4

8

12

16

20

0.1

0.01

1

10

Eoff

Eon

Common emitter

VCC = 300 V

VGG = ±15 V

RG = 56 Ω

: Tc

= 25°C

: Tc

= 125°C

Note2

3

0.3

0.03

10

1

Eoff

Eon

Common emitter

VCC = 300 V

VGG = ±15 V

IC = 20 A

: Tc

= 25°C

: Tc

= 125°C

Note2

0.1

1

10

100

1000

3

0.3

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GT20J101 Datasheet(PDF) 4 Page - Toshiba Semiconductor

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