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GT20J101 Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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GT20J101 Datasheet(HTML) 4 Page - Toshiba Semiconductor |
4 / 6 page GT20J101 2006-11-01 4 Gate resistance RG (Ω) Switching time ton, tr – RG Collector current IC (A) Switching time ton, tr – IC Gate resistance RG (Ω) Switching time toff, tf – RG Collector current IC (A) Switching time toff, tf – IC Gate resistance RG (Ω) Switching loss Eon, Eoff – RG Collector current IC (A) Switching loss Eon, Eoff – IC 1 0.5 0.3 0.05 0.1 3 tr ton Common emitter VCC = 300 V VGG = ±15 V IC = 20 A : Tc = 25°C : Tc = 125°C 0.03 3 10 30 100 300 1000 4 0 1 0.3 0.01 0.03 3 8 12 16 20 Common emitter VCC = 300 V VGG = ±15 V RG = 56 Ω : Tc = 25°C : Tc = 125°C tr ton 0.1 0.05 0.5 0.1 0.3 1 3 0.05 0.5 0.03 Common emitter VCC = 300 V VGG = ±15 V IC = 20 A : Tc = 25°C : Tc = 125°C 10 30 100 3 1000 300 toff tf 0.3 0 4 8 12 16 0.1 3 1 20 0.01 Common emitter VCC = 300 V VGG = ±15 V RG = 56 Ω : Tc = 25°C : Tc = 125°C tf toff 0.03 0.5 0.05 0 4 8 12 16 20 0.1 0.01 1 10 Eoff Eon Common emitter VCC = 300 V VGG = ±15 V RG = 56 Ω : Tc = 25°C : Tc = 125°C Note2 3 0.3 0.03 10 1 Eoff Eon Common emitter VCC = 300 V VGG = ±15 V IC = 20 A : Tc = 25°C : Tc = 125°C Note2 0.1 1 10 100 1000 3 0.3 |
Similar Part No. - GT20J101_06 |
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Similar Description - GT20J101_06 |
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