GT50J325 datasheet(4/7 Pages) TOSHIBA

Part #	GT50J325

Description	Silicon N Channel IGBT High Power Switching Applications

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Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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4 / 7 page

GT50J325

2006-11-01

4

Collector current IC (A)

Switching time ton, tr, td (on) – IC

Gate resistance RG (Ω)

Switching time toff, tf, td (off) – RG

Gate resistance RG (Ω)

Switching loss Eon, Eoff – RG

Gate resistance RG (Ω)

Switching time ton, tr, td (on) – RG

Collector current IC (A)

Switching loss Eon, Eoff – IC

Collector current IC (A)

Switching time toff, tf, td (off) – IC

td (on)

tr

0

10

20

30

40

50

0.01

0.03

0.3

1

3

10

0.1

Common emitter

VCC = 300 V

VGG = 15 V

RG = 13 Ω

: Tc

= 25°C

: Tc

= 125°C

(Note 1)

ton

0

10

20

30

40

50

0.01

0.03

0.3

1

3

10

0.1

Common emitter

VCC = 300 V

VGG = 15 V

RG = 13 Ω

: Tc

= 25°C

: Tc

= 125°C

(Note 1)

td (off)

toff

tf

1

3

10

30

100

1000

0.1

0.3

1

3

10

30

300

Common emitter

VCC = 300 V

VGG = 15 V

IC = 50 A

: Tc

= 25°C

: Tc

= 125°C

(Note 2)

Eoff

Eon

1

3

10

30

100

1000

0.01

0.03

0.3

1

3

10

0.1

300

td (on)

ton

tr

Common emitter

VCC = 300 V

VGG = 15 V

IC = 50 A

: Tc

= 25°C

: Tc

= 125°C

(Note 1)

1

3

10

30

100

Common emitter

VCC = 300 V

VGG = 15 V

IC = 50 A

: Tc

= 25°C

: Tc

= 125°C

(Note 1)

1000

0.01

0.03

0.3

1

3

10

0.1

300

tf

td (off)

toff

1

0

10

20

30

40

50

0.1

3

10

Common emitter

VCC = 300 V

VGG = 15 V

RG = 13 Ω

: Tc

= 25°C

: Tc

= 125°C

(Note 2)

0.3

Eoff

Eon

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