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2SA817A Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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2SA817A Datasheet(HTML) 2 Page - Toshiba Semiconductor |
2 / 4 page 2SA817A 2006-11-09 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = −50 V, IE = 0 ― ― −100 nA Emitter cut-off current IEBO VEB = −5 V, IC = 0 ― ― −100 nA Collector-emitter breakdown voltage V (BR) CEO IC = −5 mA, IB = 0 −80 ― ― V hFE (1) (Note) VCE = −2 V, IC = −50 mA 70 ― 240 DC current gain hFE (2) VCE = −2 V, IC = −200 mA 40 ― ― Collector-emitter saturation voltage VCE (sat) IC = −200 mA, IB = −20 mA ― ― −0.4 V Base-emitter voltage VBE VCE = −2 V, IC = −5 mA −0.55 ― −0.8 V Transition frequency fT VCE = −10 V, IC = −10 mA ― 100 ― MHz Collector output capacitance Cob VCB = −10 V, IE = 0, f = 1 MHz ― 14 ― pF Note: hFE (1) classification O: 70 to 140, Y: 120 to 240 Marking A817A Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Characteristics indicator Part No. (or abbreviation code) |
Similar Part No. - 2SA817A_07 |
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Similar Description - 2SA817A_07 |
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