2SA817A_07 datasheet(2/4 Pages) TOSHIBA

Part #	2SA817A

Description	Driver-Stage Amplifier Applications Voltage Amplifier Applications

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Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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2 / 4 page

2SA817A

2006-11-09

2

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

ICBO

VCB = −50 V, IE = 0

―

−100

nA

Emitter cut-off current

IEBO

VEB = −5 V, IC = 0

―

−100

nA

Collector-emitter breakdown voltage

V (BR) CEO

IC = −5 mA, IB = 0

−80

―

V

hFE (1)

(Note)

VCE = −2 V, IC = −50 mA

70

―

240

DC current gain

hFE (2)

VCE = −2 V, IC = −200 mA

40

―

Collector-emitter saturation voltage

VCE (sat)

IC = −200 mA, IB = −20 mA

―

−0.4

V

Base-emitter voltage

VBE

VCE = −2 V, IC = −5 mA

−0.55

―

−0.8

V

Transition frequency

fT

VCE = −10 V, IC = −10 mA

―

100

―

MHz

Collector output capacitance

Cob

VCB = −10 V, IE = 0, f = 1 MHz

―

14

―

pF

Note: hFE (1) classification O: 70 to 140, Y: 120 to 240

Marking

A817A

Lot No.

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

Characteristics

indicator

Part No. (or abbreviation code)

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