2SA1150

2007-11-01

1

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)

2SA1150

Low Frequency Amplifier Applications

• Complementary to 2SC2710.

Characteristics

Symbol

Rating

Unit

Collector-base voltage

−35

V

Collector-emitter voltage

−30

V

Emitter-base voltage

−5

V

Collector current

−800

mA

Base current

−160

mA

Collector power dissipation

300

mW

Junction temperature

150

°C

Storage temperature range

−55~150

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and

individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

⎯

⎯

−0.1

μA

Emitter cut-off current

⎯

⎯

−0.1

μA

Collector-emitter breakdown voltage

−30

⎯

⎯

V

(Note)

100

⎯

320

DC current gain

35

⎯

⎯

Collector-emitter saturation voltage

⎯

⎯

−0.7

V

Base-emitter voltage

−0.5

⎯

−0.8

V

Transition frequency

⎯

120

⎯

MHz

Collector output capacitance

⎯

19

⎯

pF

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-4E1A

Weight: 0.13 g (typ.)