HN2S03T

2007-11-01

1

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type

HN2S03T

High Speed Switching Application

Two independent diodes are mounted on Thin Extreme Super Mini Quad

package that are suitable for higher mounting densities.

Low forward voltage

Low reverse current

Small total capacitance

Characteristic

Symbol

Rating

Unit

Maximum (peak) reverse Voltage

25

V

Reverse voltage

20

V

Maximum (peak) forward current

100 *

mA

Average forward current

50 *

mA

Surge current (10ms)

1 *

A

Power dissipation

P

70 **

mW

Junction temperature

125

°C

Storage temperature range

−55∼125

°C

Operating temperature range

−40∼100

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

* : Unit rating. Total rating = Unit rating x 1.5

**: Total rating

Characteristic

Symbol

Test

Circuit

Test Condition

Min

Typ.

Max

Unit

―

―

0.33

―

―

―

0.38

―

Forward voltage

―

―

0.50

0.55

V

Reverse current

―

―

―

0.5

μA

Total capacitance

―

―

3.9

―

pF

0.9±0.05

1.2±0.05

1

2

3

4

JEDEC

―

JEITA

―

TOSHIBA

―

Weight: 1.5mg(Typ.)

Unit: mm

1. ANODE1

2. ANODE2

3. CATHODE2

4. CATHODE1

TESQ