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HN2S03T Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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HN2S03T Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 2 page HN2S03T 2007-11-01 1 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S03T High Speed Switching Application Two independent diodes are mounted on Thin Extreme Super Mini Quad package that are suitable for higher mounting densities. Low forward voltage : VF (3) = 0.50V (typ.) Low reverse current : IR= 0.5μA (max) Small total capacitance : CT = 3.9pF (typ.) Absolute Maximum Ratings (Q1, Q2 Common, Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 25 V Reverse voltage VR 20 V Maximum (peak) forward current IFM 100 * mA Average forward current IO 50 * mA Surge current (10ms) IFSM 1 * A Power dissipation P 70 ** mW Junction temperature Tj 125 °C Storage temperature range Tstg −55∼125 °C Operating temperature range Topr −40∼100 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). * : Unit rating. Total rating = Unit rating x 1.5 **: Total rating Electrical Characteristics (Q1, Q2 Common, Ta = 25°C) Characteristic Symbol Test Circuit Test Condition Min Typ. Max Unit VF (1) ― IF = 1mA ― 0.33 ― VF (2) ― IF = 5mA ― 0.38 ― Forward voltage VF (3) ― IF = 50mA ― 0.50 0.55 V Reverse current IR ― VR = 20V ― ― 0.5 μA Total capacitance CT ― VR = 0, f = 1MHz ― 3.9 ― pF 0.9±0.05 1.2±0.05 1 2 3 4 JEDEC ― JEITA ― TOSHIBA ― Weight: 1.5mg(Typ.) Unit: mm 1. ANODE1 2. ANODE2 3. CATHODE2 4. CATHODE1 TESQ |
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