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HN4K03JU Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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HN4K03JU Datasheet(HTML) 2 Page - Toshiba Semiconductor |
2 / 5 page HN4K03JU 2007-11-01 2 Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common) Characteristic Symbol Test Condition Min. Typ. Max. Unit Gate leakage current IGSS VGS = 10V, VDS = 0 ― ― 1 μA Drain-Source breakdown voltage V (BR) DSS ID = 100μA, VGS = 0 20 ― ― V Drain cut-off current IDSS VDS = 20V, VGS = 0 ― ― 1 μA Gate threshold voltage Vth VDS = 3V, ID = 0.1mA 0.5 ― 1.5 V Forward transfer admittance | Yfs | VDS = 3V, ID = 10mA 25 50 ― mS Drain-Source ON resistance RDS (ON) ID = 10mA, VGS = 2.5V ― 8 12 Ω Input capacitance Ciss VDS = 3V, VGS = 0, f = 1MHz ― 8.5 ― pF Reverse transfer capacitance Crss VDS = 3V, VGS = 0, f = 1MHz ― 3.3 ― pF Output capacitance Coss VDS = 3V, VGS = 0, f = 1MHz ― 9.3 ― pF Turn-on time ton VDD = 3V, ID = 10mA VGS = 0~2.5V ― 0.16 ― Switching time Turn-off time toff VDD = 3V, ID = 10mA VGS = 0~2.5V ― 0.15 ― μs Equivalent Circuit (Top View) Marking |
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