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TLP629-4 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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TLP629-4 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 7 page TLP629,TLP629 −2,TLP629−4 2007-10-01 1 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP629,TLP629 −2,TLP629−4 Telecommunication Office Machine Telephone Use Equipment The TOSHIBA TLP629, −2, and −4 consists of a photo−transistor optically coupled to a gallium arsenide infrared emitting diode. The TLP629−2 offers two isolated channels in an eight lead plastic DIP, while the TLP629−4 provides four isolated channels in a sixteen plastic DIP. This is suitable for application of DC input current up to 150mA. • IF maximum rating: 150mA • Collector−emitter voltage: 55V (min.) • Current transfer ratio: 25% (min.) (IF=20mA) • Isolation voltage: 5000Vrms (min.) • UL recognized: UL1577, file no. E67349 • BSI approved: BS EN60065:2002, certificate no.7426 BS EN60950-1:2002, certificate no.7427 Pin Configurations (top view) TOSHIBA 11−5B2 Weight: 0.26 g TOSHIBA 11−10C4 Weight: 0.54 g TOSHIBA 11−20A3 Weight: 1.1 g Unit in mm |
Similar Part No. - TLP629-4 |
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Similar Description - TLP629-4 |
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