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JDV2S07FS Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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JDV2S07FS Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 3 page JDV2S07FS 2004-02-09 1 TOSHIBA DIODE Silicon Epitaxial Planar Type JDV2S07FS VCO for UHF Band Radio • High Capacitance Ratio: C1V/C4V = 2.3 (typ.) • Low Series Resistance : rs = 0.42 Ω (typ.) • This device is suitable for use in a small-size tuner. Maximum Ratings (Ta = 25°C) Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Reverse voltage VR IR = 1 µA 10 ⎯ ⎯ V Reverse current IR VR = 10 V ⎯ ⎯ 3 nA C1V VR = 1 V, f = 1 MHz 4.0 4.5 4.9 Capacitance C4V VR = 4 V, f = 1 MHz 1.85 2.0 2.35 pF Capacitance ratio C1V/C4V ⎯ 2.0 2.3 ⎯ ⎯ Series resistance rs VR = 1 V, f = 470 MHz ⎯ 0.42 0.55 Ω Note: Signal level when capacitance is measured: Vsig = 500 mVrms Marking Unit: mm JEDEC ― JEITA ― TOSHIBA 1-1L1A Weight: 0.0006 g (typ.) Characteristics Symbol Rating Unit Reverse voltage VR 10 V Junction temperature Tj 150 °C Storage temperature range Tstg −55~150 °C D 0.2 0.1±0.05 0.6±0.05 A 0.48+0.02 -0.03 ±0.05 A M 0.07 |
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