SSM3K02T

2007-11-01

1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

SSM3K02T

High Speed Switching Applications

• Small package

Characteristics

Symbol

Rating

Unit

Drain-source voltage

30

V

Gate-source voltage

±10

V

DC

2.5

Drain current

Pulse

5.0

A

Drain power dissipation (Ta

= 25°C)

(Note 1)

1250

mW

Channel temperature

150

°C

Storage temperature range

−55~150

°C

Note:

Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Mounted on FR4 board

(25.4 mm

× 25.4 mm × 1.6 t, Cu pad: 645 mm

2

, t

= 10 s)

Note 2: The pulse width limited by max channel temperature.

Marking

Equivalent Circuit

Handling Precaution

When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment

is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other

objects that come into direct contact with devices should be made of anti-static materials.

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-3S1A

Weight: 0.01 g (typ.)

K U

3

1

2

3

12