SSM3K15F datasheet(2/5 Pages) TOSHIBA

Part #	SSM3K15F

Description	High Speed Switching Applications

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Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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SSM3K15F

2007-11-01

2

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±16 V, VDS = 0

⎯

±1

μA

Drain-source breakdown voltage

V (BR) DSS

ID = 0.1 mA, VGS = 0

30

⎯

V

Drain cut-off current

IDSS

VDS = 30 V, VGS = 0

⎯

1

μA

Gate threshold voltage

Vth

VDS = 3 V, ID = 0.1 mA

0.8

⎯

1.5

V

Forward transfer admittance

⏐Yfs⏐

VDS = 3 V, ID = 10 mA

25

⎯

mS

ID = 10 mA, VGS = 4 V

⎯

2.2

4.0

Drain-source ON resistance

RDS (ON)

ID = 10 mA, VGS = 2.5 V

⎯

4.0

7.0

Ω

Input capacitance

Ciss

VDS = 3 V, VGS = 0, f = 1 MHz

⎯

7.8

⎯

pF

Reverse transfer capacitance

Crss

VDS = 3 V, VGS = 0, f = 1 MHz

⎯

3.6

⎯

pF

Output capacitance

Coss

VDS = 3 V, VGS = 0, f = 1 MHz

⎯

8.8

⎯

pF

Turn-on time

ton

⎯

50

⎯

Switching time

Turn-off time

toff

VDD = 5 V, ID = 10 mA,

VGS = 0~5 V

⎯

180

⎯

ns

Switching Time Test Circuit

(a) Test circuit

(b) VIN

Precaution

Vth can be expressed as voltage between gate and source when low operating current value is ID = 100 μA for this

product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower

voltage than Vth.

(relationship can be established as follows: VGS (off) < Vth < VGS (on) )

Please take this into consideration for using the device.

(c) VOUT

ton

90%

10%

0 V

5 V

10%

90%

toff

tr

tf

VDD

VDS (ON)

VDD = 5 V

D.U. <= 1%

Input: tr, tf < 5 ns

(Zout = 50 Ω)

Common Source

Ta

= 25°C

VDD

Output

Input

5 V

0

10

μs

RL

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