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2SB905 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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2SB905 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
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2 / 5 page  2SB905 2006-11-21 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = −150 V, IE = 0 ― ― −1.0 μA Emitter cut-off current IEBO VEB = −6 V, IC = 0 ― ― −1.0 μA Collector-emitter breakdown voltage V (BR) CEO IC = −10 mA, IB = 0 −150 ― ― V DC current gain hFE (Note) VCE = −5 V, IC = −200 mA 60 ― 320 Collector-emitter saturation voltage VCE (sat) IC = −500 mA, IB = −50 mA ― ― −1.5 V Base-emitter voltage VBE VCE = −5 V, IC = −5 mA −0.5 ― −0.8 V Transition frequency fT VCE = −5 V, IC = −200 mA 15 50 ― MHz Collector output capacitance Cob VCB = −10 V, IE = 0, f = 1 MHz ― ― 35 pF Note: hFE classification R: 60 to 120, O: 100 to 200, Y: 160 to 320 Marking B905 Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Characteristics indicator Part No. (or abbreviation code) |
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Similar Description - 2SB905 |
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